LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME

摘要

A light emitting diode and a method for manufacturing the same are provided to extend a light emitting surface area by using a light emitting structure having a rough surface. A first semiconductor layer(158) is formed on an upper surface of a substrate(100). An active layer(156) is formed on an upper surface of the first semiconductor layer. A second semiconductor layer is formed on an upper surface of the active layer. A light emitting structure(150) is composed of the first semiconductor layer, the active layer, and the second semiconductor layer. The second semiconductor layer includes a first region and a second region. The second region is protruded in comparison with the first region. An upper surface and a lateral surface of the second region have concavo-convex surfaces. The conductive layer is positioned on the first region.