| 摘要 |
<p>A thin film, a thin film transistor substrate including the same, and a manufacturing method thereof are provided to improve aperture ratio by forming a drain electrode and a contact hole at an inner side of a circle source electrode. A thin film transistor substrate comprises a gate line(21), a data line(61), a gate electrode, a semiconductor layer, an ohmic contact layer, a source electrode(60), a thin film transistor(TFT), a passivation layer(80), a pixel electrode(100), and a contact hole(90). The gate line and the data line are formed on a substrate. The gate electrode is protruded from the gate line. The semiconductor layer and the ohmic contact layer are formed to overlay with the gate electrode. The source electrode is formed on the ohmic contact hole to have an annual shape. The thin film transistor includes a drain electrode. The passivation layer is formed on a gate insulation layer, the thin film transistor, and the data line. The pixel electrode is formed in a pixel region defined by an intersection between the gate line and the data line. The contact hole contacts with the drain electrode and the pixel electrode through the passivation layer.</p> |
