| 摘要 |
It is an object of the present invention to prevent device characteristic deterioration and increase device production yields by a process of laser working which has a high throughput, as means for working of device shapes, and etching as treatment after laser working. The present invention relates to a process for fabrication of a nitride semiconductor light emitting device comprising a substrate, a nitride semiconductor layer on the substrate and electrodes on the nitride semiconductor, the process for fabrication of a nitride semiconductor light emitting device being characterized by device working by laser, followed by etching treatment and then electrode formation. |
