发明名称 INTEGRATED METHOD FOR REMOVAL OF HALOGEN RESIDUES FROM ETCHED SUBSTRATES BY THERMAL PROCESS
摘要 <p>An integrated method for removing halogen residues from an etched chamber through a thermal process is provided to prevent the corrosion and pollution of a process system due to exhausted halogens by using a halogen-containing residual removing process selected at en-route. A process system(100) having a vacuum airtight platform(104) is provided. A substrate(124) is processed in process chambers(110,112,132,128,120) with chemicals including halogen. The processed substrate is treated in the platform to exhaust volatile residues. When the processed substrate is treated, it is heated while it is in a load lock chamber(122) of the platform. When the processed substrate is treated, it is heated on a blade of a robot arranged on the platform. When the processed substrate is treated, it is heated in a transfer chamber(136) coupled to the process chamber.</p>
申请公布号 KR20080037565(A) 申请公布日期 2008.04.30
申请号 KR20070107670 申请日期 2007.10.25
申请人 APPLIED MATERIALS INC. 发明人 KAWAGUCHI MARK NAOSHI;LO KIN PONG;HOOGENSEN BRETT CHRISTIAN;WEN SANDY M.;KIM, STEVEN H.;BAHNG KENNETH J.;DAVIS MATTHEW FENTON;LILL THORSTEN
分类号 H01L21/304 主分类号 H01L21/304
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