METHOD OF FABRICATING THIN FILM TRANSISTOR SUBSTRATE

摘要

A method for fabricating a TFT substrate is provided to avoid a skew phenomenon of a source/drain electrode by forming the source/drain electrode by a dry etch process. A gate interconnection, a gate insulation layer, an active layer, a conductive layer for a data interconnection, and a photoresist pattern composed of first and second regions are sequentially formed on an insulation substrate(10). By using the photoresist pattern as an etch mask, the conductive layer for the data interconnection is etched to form a conductive pattern for a source/drain electrode(65,66) and a data line(62). By using the photoresist pattern as an etch mask, the active layer is etched to form an active layer pattern. The second region of the photoresist pattern is removed. By employing etch gas and using the photoresist pattern as an etch mask, the conductive layer pattern for the source/drain electrode under the second region is dry-etched. A part of the active layer pattern is etched by using the photoresist pattern as an etch mask. Reaction byproducts of the conductive layer pattern for the source/drain electrode are physically removed by a reaction byproducts removing agent so that external force is applied to the etch gas and the reaction byproducts. The photoresist pattern is stripped, and a passivation layer(70) and a pixel electrode are formed.