| 摘要 |
A light emitting device is provided to prevent a pin hole or cracks from being easily generated by including a structure in which an electrode is coated with an insulation layer with excellent step coverage. A first compound semiconductor layer(11) of a first conductivity type, an active layer(12) and a second compound semiconductor layer(13) of a second conductivity type different from the first conductivity type are sequentially formed on a base member(10). A part of the first compound semiconductor layer is exposed, and a first electrode(15) is formed on a part of the exposed first compound semiconductor layer, and a second electrode(14) is formed on the second compound semiconductor layer. A part(17) of the exposed first compound semiconductor layer, the exposed part of the active layer, a part of the exposed second compound semiconductor layer and a part of the second electrode are coated with an SOG(spin on glass) layer(16). First and second openings(18A,18B) can be formed in a part of an SOG layer on the first electrode and a part of the SOG layer on the second electrode.
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