| 摘要 |
A TFT(Thin Film Transistor) substrate and a manufacturing method thereof, and a display device having the TFT substrate are provided to obtain the TFT substrate on which a capacitance element having an optimal material and a layer thickness is formed without a limitation of production efficiency and the degree of freedom in design. A TFT substrate comprises a TFT and a capacitance element(130). The TFT includes a semiconductor layer(2), a gate electrode(4b), a gate insulating film(3), and source/drain line(8) and a pixel electrode(11a). The gate electrode is opposite to the semiconductor layer in a film thickness direction. The gate insulating film is interposed between the semiconductor layer and the gate electrode. The source/drain lines and the pixel electrode are electrically connected to the semiconductor layer. The capacitance element comprises a first capacity electrode(4a), a dielectric layer(5a), and a second capacitor electrode(6a). The first capacity electrode is comprised of the conductive layer of the same layer as the gate electrode. The dielectric layer is on the first capacity electrode. The second capacitor electrode is on the dielectric layer, has the same shape as the dielectric layer, and is opposite to the first capacitor electrode through the dielectric layer. The second capacitor electrode is formed by a layer different from the source/drain line and the pixel electrode. |
