| 摘要 |
A process and an apparatus for producing a polycrystalline semiconductor including charging a raw semiconductor material into a crucible (9), heating to melt the raw semiconductor material in the crucible (9) by heating means (5), solidifying the melted material while depriving the bottom of the crucible (9) of heat, and then cooling the crucible (9) to cool the solidified semiconductor, in an atmosphere inert to the semiconductor throughout, characterized by alternately subjecting the semiconductor crystal to growth and annealing in the solidification step while periodically varying the amount of heat liberated from the raw semiconductor material. <IMAGE> |
