| 摘要 |
Disclosed is a light-emitting diode (10) comprising a silicon single-crystal substrate (101) of a first conductivity type, a light-emitting unit (40) formed on the substrate and containing a first pn-junction structure composed of a group III nitride semiconductor, an ohmic electrode (107b) of a first polarity arranged on the light-emitting unit, and an ohmic electrode (108) of a second polarity arranged on the same side as the light-emitting unit with respect to the substrate. In this light-emitting diode (10), a second pn-junction structure (30) is formed in a region ranging from the substrate to the light-emitting unit, and a light reflection hole (109) is provided in the substrate from the back surface, which is opposite to the surface on which the light-emitting unit is provided, toward the lamination direction. The inner circumferential surface of the light reflection hole and the back surface of the substrate are covered with a metal film (110). |
