发明名称 |
Mask patterns for semiconductor device fabrication and related methods |
摘要 |
Methods of forming an integrated circuit device may include forming a resist pattern on a layer of an integrated circuit device with portions of the layer being exposed through openings of the resist pattern. An organic-inorganic hybrid siloxane network film may be formed on the resist pattern. Portions of the layer exposed through the resist pattern and the organic-inorganic hybrid siloxane network film may then be removed. Related structures are also discussed.
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申请公布号 |
US7361609(B2) |
申请公布日期 |
2008.04.22 |
申请号 |
US20050232703 |
申请日期 |
2005.09.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HAH JUNG-HWAN;KIM HYUN-WOO;HATA MITSUHIRO;WOO SANG-GYUN |
分类号 |
H01L21/302;G03F1/70;G03F1/80;G03F7/40;H01L21/027 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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