| 摘要 |
A photoresist material comprises a polymer that turns soluble to a base solution with acid, a photo-acid generator (PAG) (130) that decomposes to form an acid in response to radiation energy, and a quencher (140) capable of neutralizing acid and having a reduced mobility by being chemically bonded to polymer, being hydrophobic or physically trapped in the polymer. A photoresist material for immersion lithography comprises a polymer that turns soluble to a base solution in response to reaction with acid, a photo-acid generator (PAG) (130) that decomposes to form an acid in response to radiation energy, and a quencher (140) capable of neutralizing acid and having a reduced mobility. The quencher comprises a nitrogen atom having an unpaired electron; at least one ring structure attached to the nitrogen atom; at least four atom units attached to the nitrogen atom of the quencher; or at least one branch chain attached to the nitrogen atom of the quencher. The quencher is hydrophobic and comprises fluoride. An independent claim is included for a method for immersion lithography involving forming photo sensitive layer on a substrate; exposing the photo sensitive layer in an immersion lithography system with an immersion fluid; baking the photo sensitive layer; and developing the exposed photo sensitive layer. |
