METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

摘要

A method for fabricating a semiconductor device is provided to relieve compressive stress by forming a liner insulating layer having tensile stress under polysilazane in a trench. Trenches(106) are formed on a semiconductor substrate(100), and then a liner insulating layer(108) is formed in the trench. A first SOD(Spin on Dielectric) material having a porous property is formed in a region under the trench, and then a second SOD material is formed on the entire surface of the substrate to bury the trenches. A heat treatment process is performed on the substrate to densify the first SOD material and the second SOD material at the same time. The first SOD material is hydrogen silisesquoxane having tensile stress which is opposite to polysilazane having compressive stress.