| 摘要 |
A CMOS image sensor and a method for manufacturing the same are provided to maximize sensitivity of a color filter and to optimize a B(Blue)/G(Green) ratio characteristic by differently forming thicknesses of dielectrics where the color filter is formed by taking into account a wavelength of light. A photo diode is formed on a substrate(110). A dielectric(130) includes steps having different thicknesses of regions corresponding to the color filter. A color filter layer(140) is formed on the dielectric having the step. The color filter layer includes a blue filter(144), a green filter(146), and a red filter(142). A micro lens(160) is formed on the color filter layer to correspond to each color filter. A thickness of the dielectric where the blue filter is formed is thicker than that of the dielectric where the red filter is formed. A thickness of the dielectric where the green color filter is formed is thicker than that of the dielectric where the blue filter is formed.
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