| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which can be processed with a good line edge roughness. SOLUTION: The method of manufacturing a semiconductor device comprises a step of forming a film as a processing target on a substrate, a step of forming a bottom layer including an organic film on the processing target film, a step of forming a top layer containing a silicon component on the bottom layer, a step of patterning the top layer, a residue removal step of selectively removing a residue on the surface of the bottom layer without etching the bottom layer after the top layer patterning step, a bottom layer etching step of etching the bottom layer with use of the top layer as a mask, and a target film etching step of etching the processing target film with use of the bottom layer as a mask after the bottom layer etching step. COPYRIGHT: (C)2008,JPO&INPIT
|
