| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device having a function useful for evading an error in a writing operation or erasing operation by recognizing the internal state. <P>SOLUTION: A main memory cell array 6 is constituted of a plurality of main memory cells for recording an input information. When an instruction to write or erase is given, a write/erase control circuit 4 controls to repeat voltage application for the writing or erasing operation with respect to a target memory cell selected by an address decoder, until the data writing or erasing operation is completed, and to write a characteristic value showing the number of times of repeating the voltage application, required by the target memory cell before the data writing or erasing operation is completed, into an auxiliary memory cell corresponding to the block in which the target memory cell belongs, in a plurality of auxiliary memory cells constituting an auxiliary memory cell array 7. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
