Semiconductor device e.g. MOSFET, for use in supply network, has monocrystalline silicon body, which includes semiconductor device structure with regions of porous-microcrystalline silicon

摘要

The device has a monocrystalline silicon body (1), which includes a semiconductor device structure (2) with regions of porous-microcrystalline silicon (3). The semiconductor device structure has a substrate region (4) from porous-microcrystalline and highly doped semiconductor materials. The porous-monocrystalline semiconductor material is arranged in integrated circuits at cross current-endangered positions. An independent claim is also included for a method for producing monocrystalline semiconductor wafers for semiconductor device with semiconductor device structures.