| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for fabricating a recess gate of a semiconductor device capable of preventing the generation of a leakage current and property degradation in a gate insulating layer by rounding a portion between a vertical pattern and a bulb pattern in a bulb-shaped recess gate. SOLUTION: The method includes steps of: etching a substrate 31C to form a first trench pattern 37A; forming spacers 38A over sidewalls of the first trench pattern 37A; etching a bottom portion of the first trench pattern using the spacers as a barrier to form a second trench pattern; performing an isotropic etching on the second trench pattern to round sidewalls of the second trench pattern and form a bulb pattern 37C; and forming a recess gate over a bulb-shaped recess pattern 100 including the first trench pattern 37A, the rounded second trench pattern 37D, and the bulb pattern 37C. COPYRIGHT: (C)2008,JPO&INPIT
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