| 摘要 |
An ashing apparatus is provided to keep uniformity of ashing speed by introducing only oxygen gas into a reaction tube while exhausting a chamber and a reaction tube, and keeping the pressure of the reaction tube and the chamber in a range of 250Pa to 650Pa. An ashing apparatus(10) includes a reaction tube(12), a coil(18) and a high frequency power source(20) for inducing and maintaining high frequency gas discharge at the inside of the reaction tube, and a chamber(22) including a susceptor(24) for holding a semiconductor substrate(a) and directly connected to the reaction tube. Wherein, only oxygen gas is introduced into the reaction tube while exhausting the inside of the reaction tube and the inside of the chamber, and the pressure at the inside of the reaction tube and the inside of the chamber in ashing falls in a range equal to or higher than 250 Pa and equal to or lower than 650 Pa.
|
