| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid-state imaging apparatus reducing a leakage current among pixel cells, achieving a separation among the pixel cells proper to fining and improving the sensibility of an optoelectric transducer and a method for manufacturing the solid-state imaging apparatus. <P>SOLUTION: The solid-state imaging apparatus by one mode has a plurality of the pixel cells containing second conductivity type charge storage layers formed in second conductivity type semiconductor layers formed to the upper section of a first conductivity type substrate wafer. The solid-state imaging apparatus further has first conductivity type element isolation diffusion layers which are formed around the pixel cells to electrically isolate each pixel cell, and partially have different impurity concentrations in a plane. <P>COPYRIGHT: (C)2008,JPO&INPIT |
