SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device in which a conventional low-power-consumption SOI device and a high-withstand-voltage transistor are formed on the same SOI substrate and to provide its manufacturing method. SOLUTION: The SOI substrate including a silicon substrate layer, an insulating layer formed on the silicon substrate layer and a semiconductor layer formed on the insulating layer is prepared. At least one first transistor which has its operation active region in the silicon substrate layer of the SOI substrate and at least one second transistor which has its operation active region in the semiconductor layer of the SOI substrate are formed. COPYRIGHT: (C)2008,JPO&INPIT