| 摘要 |
<p>A low profile, 1 or 2 die design, surface mount high power microelectroni c package with coefficient of expansion (CTE) matched materials such as Sili con die to Molybdenum conductor (bond pads). The CTE matching of the materia ls in the package enables the device to withstand repeated, extreme temperat ure range cycling without failing or cracking. The package can be used for t ransient voltage suppression (TVS), Schottky diode, rectifier diode, or high voltage diodes, among other uses. The use of a heat sink metal conductor th at has a very high modulus of elasticity allows for a very thin wall plastic locking to be utilized in order to minimize the footprint of the package.</ SDOAB></p> |
