发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 Wiring of a PDP address driver IC is disclosed which affords an adequate permitted current capacity. In the PDP address driver IC that drives the PDP, a layer, in which a planar high voltage ground wiring layer and a planar high voltage power wiring layer are formed, is provided atop a layer in which planar high voltage ground wiring layers that supply a ground potential to the active element that is formed within the PDP address driver IC and in which planar high voltage power wiring layers that supply a source potential to the active element are formed. Accordingly, the PDP address driver IC can comprise an adequate permitted current capacity while maintaining a compact size and comprising a multiplicity of output bit portions.
申请公布号 US2008083937(A1) 申请公布日期 2008.04.10
申请号 US20070861074 申请日期 2007.09.25
申请人 FUJI ELECTRIC DEVICE TECHNOLOGY CO., LTD. 发明人 NOMIYAMA TAKAHIRO;TADA GEN;SHIGETA YOSHIHIRO
分类号 H01L23/52 主分类号 H01L23/52
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