| 摘要 |
A memory cell supply voltage control based on error detection is provided to increase stability of a memory cell, by adjusting the size of a pulldown FET(Field-Effect Transistor) to increase the width as increasing cell region and decreasing write stability. A memory circuit(210) includes a memory cell. An error detection circuit detects error in data stored by the memory cell of the memory circuit. A supply voltage control circuit(230) increases a supply voltage for more than one memory cell of the memory circuit, on the basis of at least a part of the detected error. The supply voltage control circuit increases a supply voltage for a predetermined sub set of memory cells including more than one memory cell with error.
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