| 摘要 |
Provided are a thin film transistor (TFT) substrate and a method for manufacturing the same. The method comprises forming on a substrate a conductive layer, an impurity-doped silicon layer, and an intermediate layer, wherein the intermediate layer comprises intrinsic silicon; patterning the intermediate layer, the impurity-doped silicon layer, and the conductive layer to form a data line, a source electrode, a drain electrode, ohmic contact portions, and intermediate portions, wherein an ohmic contact portion and an intermediate portion are on the source electrode, and an ohmic contact portion and an intermediate portion are on the drain electrode; forming an intrinsic silicon layer on the substrate; and patterning the intrinsic silicon layer to form a semiconductor layer forming channel portion between the source electrode and the drain electrode, and a contact portion on the intermediate portion.
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