| 摘要 |
A polishing composition is provided to perform polishing of a layer with a low relative permittivity while preventing agglomeration of polishing particles and inhibiting generation of scratches. A polishing composition is used for carrying out chemical mechanical polishing of an interlayer dielectric having an organosiloxane structure and a relative permittivity of 3.0 or less of an object to be polished having interconnections on the interlayer dielectric by way of a barrier metal layer during the fabrication of a semiconductor device. The polishing composition comprises: colloidal silica particles; benzotriazole compound; and a secondary or tertiary aminoalcohol represented by the following formula I, and has a pH of 7-10. In formula I, each of R1, R2 and R3 is H, an aliphatic hydrocarbon group or aromatic hydrocarbon group optionally substituted with amino, hydroxy, carboxy or hydrocarbon group, with the proviso that at least one of R1, R2 and R3 has a terminal hydroxy group and at least two of R1, R2 and R3 are substituents other than H.
|
