| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for enhancing the electrical characteristics of a ferroelectric capacitor in a ferroelectric memory having a ferroelectric film formed by a sol gel method, and to provide its manufacturing method. SOLUTION: The method for manufacturing a semiconductor device having a ferroelectric film includes a step of forming a coating film of ferroelectric material by applying sol gel solution where a perovskite type ferroelectric material is dissolved into solvent onto a lower electrode layer 72, a step of forming a ferroelectric film 73 in amorphous state or composed of microcrystal on the lower electrode layer 72, a first step of performing heat treatment of the ferroelectric film 73 in amorphous state or composed of microcrystal at a first temperature near the crystallization temperature of the ferroelectric material and crystallizing it in alignment with the crystal orientation of the lower electrode layer, and a second step of performing heat treatment of the crystallized ferroelectric film 73 in oxidization atmosphere at a second temperature lower than the first temperature and compensating for deficient oxygen in the crystallized ferroelectric film. COPYRIGHT: (C)2008,JPO&INPIT
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