发明名称 VACUUM DEPOSITION SYSTEM AND VACUUM DEPOSITION METHOD
摘要 PROBLEM TO BE SOLVED: To form a film of a plurality of layers on the member to be vapor-deposited in a short vapor deposition time in one film deposition chamber. SOLUTION: In a film deposition chamber 4, a material release part 11 arranged so as to be confronted with a substrate B is provided with first to third dispersion vessels 12A to 12C each having a release port for releasing materials. First and third evaporation cells 32A, 32C for evaporating materials and the first and third dispersion vessels 12A, 12C are connected via first and third stop valves 34A, 34C. Further, a plurality of second-1 to second-3 evaporation cells 32Ba to 32Bc for evaporating materials in which a temperature range between the evaporation temperature and thermal decomposition temperature of the materials is common, and the second dispersion vessel 12B are connected via second-1 to second-3 stop valves 34Ba to 34Bc, respectively. The first to third dispersion vessels 12A to 12C are provided with vessel heating apparatuses 17A to 17C for performing heating to a prescribed temperature between the evaporation temperature and thermal decomposition temperature of the materials to be released, respectively, and a shutter device 20 for selectively opening/closing the first to third release ports is provided. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008075095(A) 申请公布日期 2008.04.03
申请号 JP20060251981 申请日期 2006.09.19
申请人 HITACHI ZOSEN CORP 发明人 MATSUMOTO YUJI;MAEHANE YOSHIYASU
分类号 C23C14/24;H01L51/50;H05B33/10 主分类号 C23C14/24
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