APPARATUS AND METHOD FOR PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM

摘要

PROBLEM TO BE SOLVED: To provide a substrate treatment method capable of cleanly treating substrates by organic compound gas, a manufacturing method for a semiconductor device using the substrate treatment method, a substrate treatment apparatus capable of cleanly treating the substrates by the organic compound gas, and a recording medium storing a program for operating the substrate treatment apparatus. SOLUTION: The substrate treatment method comprises a first process for setting the temperature of a substrate to be treated on which an metallic layer is formed to a first temperature and forming a metal complex by making the metallic layer absorb treatment gas containing organic compounds, and a second process for heating the substrate to be treated to a second temperature higher than the first temperature and sublimating the metal complex. COPYRIGHT: (C)2008,JPO&INPIT