发明名称 FILM FORMATION APPARATUS AND FILM FORMATION METHOD AND CLEANING METHOD
摘要 The purpose of the invention is to provide a film formation apparatus capable of forming an EL layer with a high purity and a high density, and a cleaning method. The invention is a formation of an EL layer with a high density by heating a substrate 10 by a heating means for heating a substrate, decreasing the pressure of a film formation chamber with a pressure decreasing means (a vacuum pump such as a turbo-molecular pump, a dry pump, or a cryopump) connected to the film formation chamber to 5x10<SUP>-3 </SUP>Torr (0.665 Pa) or lower, preferably 1x10<SUP>-3 </SUP>Torr (0.133 Pa) or lower, and carrying out film formation by depositing organic compound materials from deposition sources. In the film formation chamber, cleaning of deposition masks is carried out by plasma.
申请公布号 US2008081115(A1) 申请公布日期 2008.04.03
申请号 US20070858962 申请日期 2007.09.21
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;MURAKAMI MASAKAZU
分类号 B05D3/00;H01L21/20;B08B6/00;C23C14/04;C23C14/12;C23C14/56;C23C14/58 主分类号 B05D3/00
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