PHASE CHANGE MEMORY DEVICE INCLUDING MEMORY CELL HAVING DIFFERENT PHASE CHANGE MATERIALS, AND METHOD AND SYSTEM RELATED TO THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a phase change memory device with memory cells, having different phase change materials, and to provide a method and system related to the device.

SOLUTION: The phase change memory device includes an integrated circuit substrate; and first and second phase change memory elements arranged on the integrated circuit substrate. The first phase change memory element includes a first phase change material having a first crystallization temperature. The second phase change memory element includes a second phase change material having a second crystallization temperature. Moreover, the first and second crystallization temperatures are different from each other so that the first and second phase change memory elements are programmable at mutually different temperatures. Related method and system are also provided.

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