| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching technique for enhancing an etching selection ratio of silicon nitride for silicon oxide and also for improving size controllability. SOLUTION: In the method of etching process for selectively etching a silicon nitride film for a silicon oxide film after arranging, within a plasma processing chamber, a laminated film formed by laminating the silicon nitride film 15 on the silicon oxide film 14, a gas including oxygen is supplied into the plasma processing chamber using a halogen gas including boron as the principal gas as an additive gas. COPYRIGHT: (C)2008,JPO&INPIT
|
