发明名称 |
Structure and material of over-voltage protection device and manufacturing method thereof |
摘要 |
The present invention relates to a material and structure of an over-voltage protection device. The material of the over-voltage protection device includes either a P-type semiconductor powder or an N-type semiconductor powder and an adhesive. The structure of the over-voltage protection device includes a first electrode, a second electrode, and a porous matrix connected between the first and second electrodes. The present invention further relates to a method of manufacturing the over-voltage protection device.
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申请公布号 |
US2008081226(A1) |
申请公布日期 |
2008.04.03 |
申请号 |
US20060598782 |
申请日期 |
2006.11.14 |
申请人 |
LIU TE-PANG;CHANG HSIU-YUN |
发明人 |
LIU TE-PANG;CHANG HSIU-YUN |
分类号 |
H01M8/00 |
主分类号 |
H01M8/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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