发明名称 Structure and material of over-voltage protection device and manufacturing method thereof
摘要 The present invention relates to a material and structure of an over-voltage protection device. The material of the over-voltage protection device includes either a P-type semiconductor powder or an N-type semiconductor powder and an adhesive. The structure of the over-voltage protection device includes a first electrode, a second electrode, and a porous matrix connected between the first and second electrodes. The present invention further relates to a method of manufacturing the over-voltage protection device.
申请公布号 US2008081226(A1) 申请公布日期 2008.04.03
申请号 US20060598782 申请日期 2006.11.14
申请人 LIU TE-PANG;CHANG HSIU-YUN 发明人 LIU TE-PANG;CHANG HSIU-YUN
分类号 H01M8/00 主分类号 H01M8/00
代理机构 代理人
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