发明名称 |
Semiconductor device having buried gate line and method of fabricating the same |
摘要 |
A semiconductor device having a buried gate line with a shaped gate trench and a method of fabricating the same are disclosed. The semiconductor device includes a trench isolation layer provided in a semiconductor substrate to define a multi-surfaced active region/channel. A gate line extending to the trench isolation layer fills a portion of the gate trench. The gate trench is formed with a series of depressions to accommodate peaks in the channel. The combination of depressions/peaks operate to increase the effective area of the channel, thereby enabling smaller channel semiconductor devices to be formed without increasing the width thereof.
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申请公布号 |
US2008079070(A1) |
申请公布日期 |
2008.04.03 |
申请号 |
US20070797137 |
申请日期 |
2007.05.01 |
申请人 |
SEO HYEOUNG-WON;SON YOUNG-WOONG;LEE KANG-YOON;KIM BONG-SOO |
发明人 |
SEO HYEOUNG-WON;SON YOUNG-WOONG;LEE KANG-YOON;KIM BONG-SOO |
分类号 |
H01L21/336;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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