| 摘要 |
<p>A flash memory device and a method for manufacturing the same are provided to form same distribution of threshold voltages within one string by setting differently doping density of a memory cell junction region connected to a first selective transistor and doping density of a memory cell junction region connected to a second selective transistor. A flash memory device includes a plurality of strings(STRING). Each of the strings is composed of two selective transistors for string selection and ground selection and a plurality of memory cells. The memory cells(MC0) are positioned between the selective transistors to be serially connected to the selective transistors. A first and a second memory cell of the memory cells are connected to the selective transistors, respectively. A junction region formed between the first and the second memory cell has doping density different from the doping density of a third memory cell formed between the first and the second memory cell.</p> |
