| 摘要 |
A method for forming a contact plug in a semiconductor device is provided to prevent an increase of an open margin while forming an open portion by forming etching stopper films at the same thickness. An insulation layer(12), which includes a contact hole, is formed on a substrate(11). A polysilicon film(13) is formed, until the contact hole is filled. The polysilicon film is etched, such that a contact plug(17A) is formed. A volume of the contact plug, which has a step difference with respect to the insulation layer, is increased by using the etching process, such that the step difference is decreased. The volume of the contact plug is increased by oxidizing the contact plug. The oxidizing process is performed by using a dry or wet oxidizing process.
|
