| 摘要 |
A method for forming an active region pattern of a semiconductor device is provided to improve characteristics of the semiconductor device by securing a line width of a center of an active region. An isolation layer is formed on a semiconductor substrate. A photoresist layer is formed on the isolation layer. A photomask having a light transmitting region is formed to set a line width(525) of a center part wider than a line width(527) of both ends in an active region of the semiconductor substrate. A photoresist pattern(521) having an exposure region(523) corresponding to the light transmitting region is formed by exposing the photoresist layer. An isolation pattern is formed by etching selectively the isolation layer exposed to the exposed region of the photoresist pattern. A semiconductor layer pattern is formed on the semiconductor substrate exposed to the isolation pattern.
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