| 摘要 |
A method and an apparatus for forming a silicon oxide film are provided to maintain a film formation rate and to form a silicon oxide layer of high quality at low temperature. A first process is performed to supply a first processing gas to a processing region, to stop a second processing gas supplied to the processing region, and to form an absorbing layer including silicon on a surface of a target substrate. A second process is performed to supply a second processing gas to the processing region, to stop the first processing gas supplied to the processing region, and to oxidize the absorbing layer formed on the surface of the target substrate. The first and second processes are performed repeatedly, in order to form an oxide layer having a predetermined thickness. The process temperature is lowered by using a univalent or bivalent aminosilane gas as the silicon source gas in comparison with a trivalent aminosilane gas.
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