SILICON PRECURSORS AND METHOD FOR LOW TEMPERATURE CVD OF SILICON-CONTAINING FILMS

摘要

Novel silicon precursors for low temperature deposition of silicon films are described herein. The disclosed precursors possess low vaporization temperatures, preferably less than about 5000C. In addition, embodiments of the silicon precursors incorporate a -Si-Y-Si- bond, where Y may comprise an amino group, a substituted or unsubstituted hydrocarbyl group, or oxygen. In an embodiment a silicon precursor has the formula: where Y is a hydrocarbyl group, a substituted hydrocarbyl group, oxygen, or an amino group; R<SUB>1</SUB>, R<SUB>2</SUB>, R<SUB>3</SUB>, and R<SUB>4</SUB> are each independently a hydrogen group, a hydrocarbyl group, a substituted hydrocarbyl group, a heterohydrocarbyl group, wherein R<SUB>1</SUB>, R<SUB>2</SUB>, R<SUB>3</SUB>, and R<SUB>4</SUB> may be the same or different from one another; X<SUB>1</SUB>, X<SUB>2</SUB>, X<SUB>3</SUB>, and X<SUB>4</SUB> are each independently, a hydrogen group, a hydrocarbyl group, a substituted hydrocarbyl group, or a hydrazino group, wherein X<SUB>1</SUB>, X<SUB>2</SUB>, X<SUB>3</SUB>, and X<SUB>4</SUB> may be the same or different from one another.