| 摘要 |
A plasma etching apparatus is provided to prevent a hole bending effect at an outermost edge of wafer and increase a yield by employing a tapered-shape focus ring with a surface height higher than the wafer. A plasma etching apparatus includes an electrostatic chuck(101) and a focus ring(103). On the electrostatic chuck, a wafer(102) to be etched is placed. The focus ring is adapted to surround an edge of the wafer and has a tapered surface tilted with a height higher than the wafer. The surface height of focus ring is at least 1.5mm higher than the wafer. The tapered surface of the focus ring has a slope more slanted when getting closed to an edge of the wafer. The height of the tapered surface is at least 4.5mm or more. Material of the focus ring is silicon, silicon oxide or aluminum.
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