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发明名称
Attenuators with progressive biased field-effect transistors
摘要
An electrical circuit having improved linearity includes a resistive circuit having a plurality of field effect transistors (FETs) and one or more gate biasing circuits.
申请公布号
US2008079477(A1)
申请公布日期
2008.04.03
申请号
US20060541476
申请日期
2006.09.29
申请人
VICE MICHAEL WENDELL
发明人
VICE MICHAEL WENDELL
分类号
H03K17/687
主分类号
H03K17/687
代理机构
代理人
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地址
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