发明名称 HIGHLY DOPED ELECTRO-OPTICALLY ACTIVE ORGANIC DIODE WITH SHORT PROTECTION LAYER
摘要 An electro-optically active organic diode has anode electrode (102), a cathode electrode (122), an electro-optically active organic layer (110) arranged between the electrodes (102, 122) and a charge carrier organic layer (116) arranged between said electro- optically active organic layer (110) and said cathode electrode layer (122), and adjacent to said electro-optically active organic layer (110). The charge carrier organic layer (116) is formed of a highly doped organic semiconductor material. A short protection layer (120) is arranged between said cathode electrode layer (122) and said charge carrier organic layer (116), and adjacent to said cathode electrode layer (122), wherein said short protection layer (120) is formed of an inorganic semiconductor material. The short protection layer prevents direct contact between the cathode layer and the charge carrier organic layer, which reduces the risk that the cathode layer will have detrimental impact on the charge carrier organic layer. This reduces the risk of a short to occur between the cathode and the anode, which results in increased reliability of the organic diode.
申请公布号 WO2008010171(A3) 申请公布日期 2008.04.03
申请号 WO2007IB52802 申请日期 2007.07.13
申请人 PHILIPS INTELLECTUAL PROPERTY & STANDARDS GMBH;KONINKLIJKE PHILIPS ELECTRONICS N.V.;BUECHEL, MICHAEL;BERTRAM, DIETRICH 发明人 BUECHEL, MICHAEL;BERTRAM, DIETRICH
分类号 H01L51/50 主分类号 H01L51/50
代理机构 代理人
主权项
地址