SEMICONDUCTOR DEVICE, AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To form a FUSI gate electrode and a silicide film with a high degree of controllability for a semiconductor device which has the FUSI gate electrode and a silicide film in a source/drain region. SOLUTION: The semiconductor device is provided with a first MIS transistor which has a full silicided first gate electrode 117. In this case, the first MIS transistor is provided with a first active region 100a which is composed of a semiconductor substrate 100, the first gate electrode 117 which is composed of a first metal silicide film formed in the first active region, a first source/drain region 110 which is formed in a region lateral to and under the first gate electrode 117 in the first active region, a first silicide film 119 which is formed in the first source/drain region 110, a base insulating film 121 which is formed in the first active region in such a way that it has contact with the first gate electrode 117 and the first silicide film 119 and an interlayer insulating film 122 which is formed on the base insulating film 121. COPYRIGHT: (C)2008,JPO&INPIT