Method for forming semiconductor memory device e.g. not-and (NAND) type flash memory device involves filling interspaces with planarizing layer of dielectric material, and removing remaining portions of sacrificial layer

摘要

Semiconductor memory device forming method includes steps of patterning a sacrificial layer formed from polysilicon to form remaining portions having interspaces and filling the openings, filling the interspaces with planarizing layer of dielectric material, removing the remaining portions of sacrificial layer, and applying an electrically conductive material to form the source line (22) and a bitline via. An independent claim is included for a semiconductor memory device.