| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, which can form a thin film so as to excellently cover the surface having a step without oxidizing a base when forming the thin film, and to provide a substrate-treating apparatus. <P>SOLUTION: This manufacturing method comprises the steps of: carrying a substrate into a treatment chamber; supplying a raw gas which has been vaporized from a liquid material into the treatment chamber to make the raw gas adsorbed on the substrate; forming a thin film on the substrate by making the raw gas adsorbed on the substrate react with a gas containing oxygen while supplying a gas containing oxygen and a reducing gas into the treatment chamber and preventing the substrate from being oxidized with the use of the reducing gas; forming the thin film with desired thickness on the substrate, by regarding the above steps as one cycle and repeating the cycle a plurality of times; and carrying the substrate having the thin film with desired thickness formed thereon, out from the treatment chamber. <P>COPYRIGHT: (C)2008,JPO&INPIT |
