EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND ITS PRODUCING METHOD

摘要

PROBLEM TO BE SOLVED: To provide an epitaxial silicon carbide single crystal substrate having a high quality silicon carbide single crystal thin film with few defects on a silicon carbide single crystal substrate and to provide its producing method. SOLUTION: The epitaxial silicon carbide single crystal substrate is characterized by having the silicon carbide single crystal thin film for suppressing the occurrence of epitaxial defects on the silicon carbide single crystal substrate. In the producing method, the Ra value of the surface roughness of the silicon carbide single crystal thin film is 0.5 nm or more and 1.0 nm or less and the atomic number ratio (C/Si) of carbon and silicon is 1.0 or less. COPYRIGHT: (C)2008,JPO&INPIT