发明名称 |
METHOD FOR REDUCING CRYSTAL DEFECTS IN TRANSISTORS WITH RE-GROWN SHALLOW JUNCTIONS BY APPROPRIATELY SELECTING CRYSTALLINE ORIENTATIONS |
摘要 |
By appropriately adapting the length direction and width directions of transistor devices with respect to the crystallographic orientation of the semiconductor material such that identical vertical and horizontal growth planes upon re-crystallizing amorphized portions are obtained, the number of corresponding stacking faults may be significantly reduced. Hence, transistor elements with extremely shallow PN junctions may be formed on the basis of pre-amorphization implantation processes while substantially avoiding any undue side effects typically obtained in conventional techniques due to stacking faults.
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申请公布号 |
US2008081403(A1) |
申请公布日期 |
2008.04.03 |
申请号 |
US20070740072 |
申请日期 |
2007.04.25 |
申请人 |
GEHRING ANDREAS;LENSKI MARKUS;HOENTSCHEL JAN;KAMMLER THORSTEN |
发明人 |
GEHRING ANDREAS;LENSKI MARKUS;HOENTSCHEL JAN;KAMMLER THORSTEN |
分类号 |
H01L21/337 |
主分类号 |
H01L21/337 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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