发明名称 ORGANOMETALLIC PRECURSOR COMPOUNDS
摘要 This invention relates to organometallic compounds represented by the formula (L<SUB>1</SUB>)<SUB>y</SUB>M(L<SUB>2</SUB>)<SUB>z-y</SUB> wherein M is a Group 5 metal or a Group 6 metal, L<SUB>1</SUB> is a substituted or unsubstituted anionic 6 electron donor ligand, L<SUB>2</SUB> is the same or different and is (i) a substituted or unsubstituted anionic 2 electron donor ligand, (ii) a substituted or unsubstituted cationic 2 electron donor ligand, or (iii) a substituted or unsubstituted neutral 2 electron donor ligand; y is an integer of 1, and z is the valence of M; and wherein the sum of the oxidation number of M and the electric charges of L<SUB>1</SUB> and L<SUB>2</SUB> is equal to 0.; a process for producing the organometallic compounds; and a method for depositing a metal and/or metal carbide/nitride layer on a substrate by the thermal or plasma enhanced dissociation of the organometallic precursor compounds.
申请公布号 WO2008039916(A1) 申请公布日期 2008.04.03
申请号 WO2007US79707 申请日期 2007.09.27
申请人 PRAXAIR TECHNOLOGY, INC.;THOMPSON, DAVID, M.;PETERS, DAVID, WALTER;MEIERE, SCOTT, HOUSTON 发明人 THOMPSON, DAVID, M.;PETERS, DAVID, WALTER;MEIERE, SCOTT, HOUSTON
分类号 C07F17/00;C23C16/00;H01L21/00 主分类号 C07F17/00
代理机构 代理人
主权项
地址