发明名称 PLASMA CVD APPARATUS AND PLASMA CVD METHOD
摘要 PROBLEM TO BE SOLVED: To vapor-deposit carbon nanotubes on the whole surface of a substrate to be treated by utilizing a plasma CVD apparatus and plasma CVD method. SOLUTION: Carbon nanotubes are vapor-deposited on the whole surface of the substrate S to be treated by: using the plasma CVD apparatus 1 having a substrate stage 14, a plasma generating means, and a mesh-shaped shielding member 15 having the same shape and same area as the substrate stage or the same shape as the substrate stage and an area smaller than the substrate stage, which are provided in a vacuum chamber 11; and then bringing a raw material gas dissociated by plasma into contact with the substrate S to be treated on the substrate stage 14 while shielding plasma generated in the vacuum chamber 11 by the shielding member 15 provided between a plasma generation region and the substrate S to be treated. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008075122(A) 申请公布日期 2008.04.03
申请号 JP20060255299 申请日期 2006.09.21
申请人 ULVAC JAPAN LTD 发明人 AGAWA YOSHIAKI;HARA YASUHIRO;SUZUKI YASUMASA;YAMAGUCHI KOICHI;KATSUMATA TAKASHI;NAKANO MINAO;MURAKAMI HIROHIKO
分类号 C23C16/511;C01B31/02;H01J37/32 主分类号 C23C16/511
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