| 摘要 |
A method of fabricating a semiconductor device comprising providing a substrate including a PMOS region and an NMOS region forming a PMOS gate electrode on the PMOS region and an NMOS gate electrode on the NMOS gate region, respectively, forming a stress liner on the PMOS region formed with the PMOS gate on the PMOS region and the NMOS region formed with the NMOS gate electrode on the NMOS region, and selectively applying radiation onto the stress liner formed on either one of the PMOS region and the NMOS region in an inert vapor ambiance.
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