SYNTHESIS METHOD OF INDIUM TIN OXIDE(ITO) ELECTRON-BEAM RESIST AND PATTERN FORMATION METHOD OF ITO USING THE SAME

摘要

A method for synthesizing an indium tin oxide electron beam resist and a method for forming an ITO pattern are provided to form a pattern in various forms according to resolution of an electron beam recorder, and solve problems caused during an etching process or lift-off process. A method for synthesizing an indium tin oxide(ITO) electron beam resist includes the steps of: providing indium chloride tetrahydrate and tin chloride dihydrate; and dissolving the indium chloride tetrahydrate and tin chloride dihydrate in 2-ethoxy ethanol to synthesize the ITO electron beam resist. A method for forming an ITO pattern includes the steps of: (200) synthesizing the ITO electron beam resist; (220) coating a substrate with the synthesized ITO electron beam resist to form an ITO electron beam resist film; (240,260) forming an ITO electron beam resist pattern by patterning the ITO electron beam resist film using an electron beam recorder; and (280) heat-treating the ITO electron beam resist pattern to form the ITO pattern. Further, the 2-ethoxy ethanol is used as solvent and stabilizer.